Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes

被引:22
|
作者
Koike, Kayo [1 ]
Yamamoto, Kazuhiro [2 ]
Ohara, Satoshi [2 ]
Kikitsu, Tomoka [3 ]
Ozasa, Kazunari [3 ]
Nakamura, Shinichiro [3 ]
Sugiyama, Masakazu [1 ]
Nakano, Yoshiaki [1 ]
Fujii, Katsushi [4 ]
机构
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, Japan
[2] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
[3] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
[4] Univ Tokyo, Global Solar Plus Initiat GS 1, Meguro Ku, 4-6-1 Komaba, Tokyo 1538904, Japan
关键词
GaN; Photoanode; Water splitting; Anodic corrosion; NiO; P-TYPE GAN; GENERATION; STABILITY;
D O I
10.1016/j.ijhydene.2016.12.141
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
n-type GaN photoanodes used for water splitting have stability problems. One means of resolving this is loading NiO catalyst on the n-type GaN surface. Aqueous electrolytes H2SO4, HCl, KOH, and NaOH are usually used for photoelectrochemical water splitting. However, suitable electrolytes for the NiO-loading on n-type GaN photoelectrode have not yet been evaluated. Therefore, we investigated the effects of changing electrolytes used for NiO-loading in this study. The photocurrent of NiO-loading on n-type GaN increased when KOH and NaOH electrolytes were used. In addition, the surfaces showed no corrosion after reaction when these electrolytes were used. However, the photocurrent was not stable using KOH electrolyte. Interestingly, stable photocurrent was observed with when the NaOH electrolyte was used. In the case of H2SO4, the photocurrent of GaN did not change with and without NiO. The surface morphologies became rough because of GaN corrosion, and NiO dissolved in the H2SO4 electrolyte. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:9493 / 9499
页数:7
相关论文
共 46 条
  • [31] Switchable synthesis of p- and n-type Cu-In-S grooved pyramid-like microcrystals for unassisted photoelectrochemical water splitting
    Feng, Xiaoyang
    Li, Rui
    Wang, Menglong
    Chen, Yubin
    JOURNAL OF MATERIALS CHEMISTRY A, 2018, 6 (24) : 11180 - 11188
  • [32] Defective Indium Tin Oxide Forms an Ohmic Back Contact to an n-Type Cu2O Photoanode to Accelerate Charge-Transfer Kinetics for Enhanced Low-Bias Photoelectrochemical Water Splitting
    Chen, Ying-Chu
    Dong, Pin-Han
    Hsu, Yu-Kuei
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (32) : 38375 - 38383
  • [33] Effects of dissolved oxygen on anodic etching of n-type GaN films using a sodium hydroxide electrolyte
    Ohkubo, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B): : L955 - L958
  • [34] Photoelectrochemical Hydrogen Production from Water Using p-Type CaFe2O4 and n-Type ZnO
    Ida, Shintaro
    Yamada, Keisuke
    Matsunaga, Takuya
    Hagiwara, Hidehisa
    Ishihara, Tatsumi
    Taniguchi, Takaaki
    Koinuma, Michio
    Matsumoto, Yasumichi
    ELECTROCHEMISTRY, 2011, 79 (10) : 797 - 800
  • [35] Sandwich-Nanostructured NiO-ZnO Nanowires@α-Fe2O3 Film Photoanode with a Synergistic Effect and p-n Junction for Efficient Photoelectrochemical Water Splitting
    Zhang, Chao
    Fan, Weiqiang
    Bai, Hongye
    Yu, Xiaoqiang
    Chen, Chao
    Zhang, Rongxian
    Shi, Weidong
    CHEMELECTROCHEM, 2014, 1 (12): : 2089 - 2097
  • [36] Effects of Potassium Adsorption and Potassium-Water Coadsorption on the Chemical and Electronic Properties of n-Type GaN(0001) Surfaces
    Irkha, Vladimir
    Himmerlich, Anja
    Reiss, Stephanie
    Krischok, Stefan
    Himmerlich, Marcel
    JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (08): : 4250 - 4260
  • [37] n-Type doping of BiVO4 with different F-doped concentrations for improving the electronic character of BiVO4 as a photoanode nanomaterial for solar water splitting: a first-principles study
    Zhao, Yongze
    Li, Xinxia
    Tang, Xinyuan
    Liang, Xuefeng
    He, Yan
    Li, Huifang
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (38) : 26122 - 26131
  • [38] Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements
    Koike, Kayo
    Goto, Takenari
    Nakamura, Shinichiro
    Wada, Satoshi
    Fujii, Katsushi
    MRS COMMUNICATIONS, 2018, 8 (02) : 480 - 486
  • [39] Investigation of carrier transfer mechanism of NiO-loaded n-type GaN photoanodic reaction for water oxidation by comparison between band model and optical measurements
    Kayo Koike
    Takenari Goto
    Shinichiro Nakamura
    Satoshi Wada
    Katsushi Fujii
    MRS Communications, 2018, 8 : 480 - 486
  • [40] Photoelectrochemical Water Splitting: A Visible-Light-Driven CoTiO3@g-C3N4-Based Photoanode Interface Follows the Type II Heterojunction Scheme
    Sundararaj, Sathiya Bama
    Amir, Humayun
    Viswanathan, Chinnuswamy
    Thangavelu, Selvaraju
    LANGMUIR, 2024, 40 (31) : 16582 - 16594