Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes

被引:22
|
作者
Koike, Kayo [1 ]
Yamamoto, Kazuhiro [2 ]
Ohara, Satoshi [2 ]
Kikitsu, Tomoka [3 ]
Ozasa, Kazunari [3 ]
Nakamura, Shinichiro [3 ]
Sugiyama, Masakazu [1 ]
Nakano, Yoshiaki [1 ]
Fujii, Katsushi [4 ]
机构
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, Japan
[2] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
[3] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
[4] Univ Tokyo, Global Solar Plus Initiat GS 1, Meguro Ku, 4-6-1 Komaba, Tokyo 1538904, Japan
关键词
GaN; Photoanode; Water splitting; Anodic corrosion; NiO; P-TYPE GAN; GENERATION; STABILITY;
D O I
10.1016/j.ijhydene.2016.12.141
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
n-type GaN photoanodes used for water splitting have stability problems. One means of resolving this is loading NiO catalyst on the n-type GaN surface. Aqueous electrolytes H2SO4, HCl, KOH, and NaOH are usually used for photoelectrochemical water splitting. However, suitable electrolytes for the NiO-loading on n-type GaN photoelectrode have not yet been evaluated. Therefore, we investigated the effects of changing electrolytes used for NiO-loading in this study. The photocurrent of NiO-loading on n-type GaN increased when KOH and NaOH electrolytes were used. In addition, the surfaces showed no corrosion after reaction when these electrolytes were used. However, the photocurrent was not stable using KOH electrolyte. Interestingly, stable photocurrent was observed with when the NaOH electrolyte was used. In the case of H2SO4, the photocurrent of GaN did not change with and without NiO. The surface morphologies became rough because of GaN corrosion, and NiO dissolved in the H2SO4 electrolyte. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:9493 / 9499
页数:7
相关论文
共 46 条
  • [21] Carrier Pathway for Photoelectrochemical Water Oxidation with Intermediate State in n-type GaN Compared with Route of Anodic Corrosion
    Fujii, Katsushi
    Goto, Takenari
    Koike, Kayo
    Sugiyama, Masakazu
    Nakamura, Shinichiro
    Wada, Satoshi
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (16): : 8562 - 8569
  • [22] Nanostructured TaON/Ta3N5 as a highly efficient type-II heterojunction photoanode for photoelectrochemical water splitting
    Pei, Lang
    Wang, Hongxu
    Wang, Xiaohui
    Xu, Zhe
    Yan, Shicheng
    Zou, Zhigang
    DALTON TRANSACTIONS, 2018, 47 (27) : 8949 - 8955
  • [23] Stable Photoelectrochemical Water Splitting Using p-n GaN Junction Decorated with Nickel Oxides as Photoanodes
    Lee, Chi Wing
    Lin, Feng-Wu
    Liao, Po-Hsun
    Lee, Ming-Lun
    Sheu, Jinn-Kong
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (30): : 16776 - 16783
  • [24] Photoelectrochemical hydrogen production from water using p-type and n-type oxide semiconductor electrodes
    Ida, Shintaro
    Yamada, Keisuke
    Matsuka, Maki
    Hagiwara, Hidehisa
    Ishihara, Tatsumi
    ELECTROCHIMICA ACTA, 2012, 82 : 397 - 401
  • [25] Photo-electrochemical water splitting system with three-layer n-type organic semiconductor film as photoanode under visible irradiation
    LIU GuiLin CHEN ChunCheng JI HongWei MA WanHong ZHAO JinCai Beijing National Laboratory for Molecular SciencesBNLMS
    Key Laboratory of Photochemistry
    Institute of ChemistryChinese Academy of SciencesBeijing China Graduate University of Chinese Academy of ScienceBeijing China
    Science China(Chemistry), 2012, 55 (09) : 1953 - 1958+2012
  • [26] Photo-electrochemical water splitting system with three-layer n-type organic semiconductor film as photoanode under visible irradiation
    LIU GuiLin 1
    Key Laboratory of Photochemistry
    Institute of Chemistry
    Science China(Chemistry), 2012, (09) : 1953 - 1958
  • [27] Photo-electrochemical water splitting system with three-layer n-type organic semiconductor film as photoanode under visible irradiation
    GuiLin Liu
    ChunCheng Chen
    HongWei Ji
    WanHong Ma
    JinCai Zhao
    Science China Chemistry, 2012, 55 : 1953 - 1958
  • [28] Photo-electrochemical water splitting system with three-layer n-type organic semiconductor film as photoanode under visible irradiation
    Liu GuiLin
    Chen ChunCheng
    Ji HongWei
    Ma WanHong
    Zhao JinCai
    SCIENCE CHINA-CHEMISTRY, 2012, 55 (09) : 1953 - 1958
  • [29] Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser
    Ching-Ting Lee
    Hong-Wei Chen
    Fu-Tsai Hwang
    Hsin-Ying Lee
    Journal of Electronic Materials, 2005, 34 : 282 - 286
  • [30] Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser
    Lee, CT
    Chen, HW
    Hwang, FT
    Lee, HY
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (03) : 282 - 286