Preparation of titania films on implant titanium by electron cyclotron resonance plasma oxidation

被引：1
|
作者：
Masumoto, Hiroshi [1 ]
Goto, Takashi [1 ]
Honda, Yoshitomo [2 ]
Suzuki, Osamu [2 ]
Sasaki, Keiichi [3 ]
机构：
[1] Tohoku Univ, Inst Mat Sci, Sendai, Miyagi, Japan
[2] Tohoku Univ, Grad Sch Dent, Div Craniofacial Funct Engn, Sendai, Miyagi, Japan
[3] Tohoku Univ, Grad Sch Dent, Div Adv Prosthet Dent, Sendai, Miyagi, Japan
来源：
BIOCERAMICS, VOL 19, PTS 1 AND 2 | 2007年 / 330-332卷
基金：
日本学术振兴会;
关键词：
titania films; octacalcium phosphate; electron cyclotron resonance plasma oxidation;
D O I：
10.4028/www.scientific.net/KEM.330-332.565
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Titania (TiO2) thin films were fabricated on titanium (Ti) substrates at low temperatures by electron cyclotron resonance (ECR) plasma oxidation, and the relationship among the oxidization conditions, crystal structure and osteoconductive property was investigated. Amorphous TiO2 films were obtained below 300 degrees C and crystallized rutile-type TiO2 films were obtained above 400 degrees C. The XRD peak intensity of rutile TiO2 increased with increasing oxidation temperature. Mixtures of octacalcium phosphate (OCP) and Dicalcium phosphate dihydrate (DCPD) peaks were observed after calcification. The intensity of the OCP and DCPD peaks after calcification increased with increasing oxidation temperature. The ECR plasma was significantly effective to prepare crystallized TiO2 films at low temperatures.
引用
收藏
页码：565 / +
页数：2
相关论文
共 50 条
  • [41] Preparation of diamond-like carbon films in methane by electron cyclotron resonance microwave plasma source ion implantation
    Li, X
    Tang, ZA
    Ma, GJ
    Wu, ZM
    Deng, XL
    CHINESE PHYSICS LETTERS, 2003, 20 (05) : 692 - 695
  • [42] Helium-charged titanium films deposited by pulsed laser deposition in an electron-cyclotron-resonance helium plasma environment
    Jin, QH
    Hu, PG
    Ling, H
    Wu, JD
    Shi, LQ
    Zhou, ZY
    CHINESE PHYSICS LETTERS, 2003, 20 (03) : 386 - 388
  • [43] Electron Cyclotron Resonance Plasma Studies Using the Second Cyclotron Harmonic Resonance
    Kovalchuk, A.V.
    Shapoval, S.Y.
    Russian Microelectronics, 2024, 53 (05) : 433 - 438
  • [44] Electron Beam Generation by an Electron Cyclotron Resonance Plasma
    Light, Max
    Madziwa-Nussinov, Tsitsi G.
    Colestock, Patrick
    Kashuba, Ronald
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2009, 37 (02) : 317 - 326
  • [45] Electron cyclotron resonance plasma excitation in a toroidal plasma
    Yu, Y.
    Xu, M.
    Wang, H. J.
    Wen, Y. Z.
    Lan, T.
    Liu, Z.
    Gong, S. B.
    Yuan, B. D.
    Wu, Y. F.
    Ye, M. Y.
    Duan, X. R.
    AIP ADVANCES, 2018, 8 (09):
  • [46] COMPARISON OF DAMAGE AND SI OXIDATION-KINETICS RESULTING FROM ELECTRON-CYCLOTRON-RESONANCE AND DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING
    HU, YZ
    LI, M
    WANG, Y
    IRENE, EA
    HUGON, MC
    VARNIERE, F
    JIANG, N
    FROMENT, M
    AGIUS, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 227 - 234
  • [47] OXIDATION OF SILICON IN AN OXYGEN PLASMA GENERATED BY A MULTIPOLAR ELECTRON-CYCLOTRON RESONANCE SOURCE
    SUNG, KT
    PANG, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2211 - 2216
  • [48] Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition
    Landheer, D
    Hulse, JE
    Quance, T
    THIN SOLID FILMS, 1997, 293 (1-2) : 52 - 62
  • [49] Room temperature O2 plasma oxidation of Si by electron cyclotron resonance plasma source
    Suh, MS
    Kim, BM
    Youn, CJ
    Yang, JW
    Lee, KB
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S800 - S805
  • [50] Electron cyclotron resonance during plasma initiation
    Johansson, C. Albert
    Aleynikov, Pavel
    JOURNAL OF PLASMA PHYSICS, 2024, 90 (01)
12345