Design criteria for a fully depleted 0.1μm SOI technology

被引：0

作者：

Burns, JA ^{[1
]}

Frankel, RS ^{[1
]}

Soares, AM ^{[1
]}

Wyatt, PW ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / 79

页数：2

共 50 条

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