Design criteria for a fully depleted 0.1μm SOI technology

被引：0
|
作者：
Burns, JA [1 ]
Frankel, RS [1 ]
Soares, AM [1 ]
Wyatt, PW [1 ]
机构：
[1] MIT, Lincoln Lab, Lexington, MA 02173 USA
来源：
1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：78 / 79
页数：2
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