Electron Transport Properties in Photo and Supersonic Wave Irradiated C60 Fullerene Nano-Whisker Field-Effect Transistors

被引：10
|
作者：
Doi, Tatsuya [1 ]
Koyama, Kyouhei [1 ]
Chiba, Yasuto [1 ]
Tsuji, Hajime [1 ]
Ueno, Misaki [1 ]
Chen, Shih-Ren [1 ,2 ]
Aoki, Nobuyuki [1 ]
Bird, Jonathan Paul [3 ]
Ochiai, Yuichi [1 ]
机构：
[1] Chiba Univ, Grad Sch Adv Integrated Sci, Chiba 2638522, Japan
[2] So Taiwan Univ Technol, Tainan 710, Taiwan
[3] SUNY Buffalo, Buffalo, NY 14260 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
基金：
日本学术振兴会;
关键词：
POLYMERIZATION;
D O I：
10.1143/JJAP.49.04DN12
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the irradiation effect of ultraviolet light (UV) and supersonic wave (SW) into fullerene nano-whisker (FNW) field-effect transistors (FET). FNW has been fabricated by liquid/liquid interfacial precipitation using a system of C-60-saturated m-xylene and isopropyl alcohol. And the morphology of FNW has been observed by a scanning electron microscope. The UV irradiation effect of FNW-FET in vacuum was observed that field effect mobility reduced from 10(-2) to 10(-3) cm(2) V-1 s(-1). Also, SW irradiation in solution, the FNW-FET shows a large increase on/off ratio from 10 to 1000. There exists a clear improvement in FET performance by use of both UV and SW irradiation for FNW. Also, the effect of exposure in air has been discussed on their FET performance. (C) 2010 The Japan Society of Applied Physics
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页数：4
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