Novel Solution Process for High-Mobility C60 Fullerene Field-Effect Transistors

Solution-processed C-60 fullerene field-effect transistors with high electron mobility were demonstrated by using a novel drying process. Highly uniform and flat C-60 layers were prepared from a C-60 solution when the solution was rapidly dried in a vacuum chamber. Field-effect transistors with solution-deposited C-60 active layers showed electron mobility of up to 0.86 cm(2) V-1 s(-1), threshold voltage of 3 V, subthreshold slope of 0.67 V/decade, and a current on/off ratio of 4 x 10(6). The mobilities of solution-deposited C-60 transistors were comparable to those of vacuum-deposited C-60 transistors. (C) 2011 The Japan Society of Applied Physics