Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells

被引：5
|
作者：
Motyka, M.
Kudrawiec, R.
Sek, G.
Misiewicz, J.
Bisping, D.
Marquardt, B.
Forchel, A.
Fischer, M.
机构：
[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
[3] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 11期
关键词：
D O I：
10.1063/1.2745122
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) from InAsN quantum dots embedded in a GaInNAs/GaAs quantum well (QW) has been investigated at low excitation conditions in the temperature range of 15-305 K. A very efficient emission at 1.3 mu m with a small spectral broadening (30 meV) has been observed at room temperature for this system. The emission intensity decreases by only two decades in the whole investigated temperature range. Carrier escape into the states of the surrounding QW has been recognized as the main PL thermal quenching mechanism and the possible quenching via defect states has appeared to be negligible in this regime of excitation. (c) 2007 American Institute of Physics.
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页数：4
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