Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

被引：1
|
作者：
You, Shuo-Ting [1 ]
Lo, Ikai [1 ]
Tsai, Jenn-Kai [2 ]
Shih, Cheng-Hung [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Dept Phys, Kaohsiung 80424, Taiwan
[2] Natl Formosa Univ, Dept Elect Engn, Huwei Township 632, Yunlin, Taiwan
来源：
AIP ADVANCES | 2015年 / 5卷 / 12期
关键词：
D O I：
10.1063/1.4937132
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface (10 (1) over bar0) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数：6
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