Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy

被引：13
|
作者：
Schuber, R. [1 ]
Chou, M. M. C. [2 ]
Schaadt, D. M. [1 ]
机构：
[1] Karlsruhe Inst Technol, CFN, Inst Appl Phys DFG, D-76131 Karlsruhe, Germany
[2] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 80424, Taiwan
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 23期
关键词：
Molecular beam epitaxy; Gallium nitride; Lithium gallium oxide; Non-Polar nitrides; Crystal structure; X-RAY-DIFFRACTION; FILMS; MBE; SUBSTRATE; CRYSTAL;
D O I：
10.1016/j.tsf.2010.06.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Growth of M-plane GaN on (100) LiGa0(2) was achieved using plasma-assisted molecular beam epitaxy Thermal annealing of the LiGa0(2) wafer was found to lead to a substrate surface suitable for growth Structural and morphological analysis was performed using x-ray and reflective high energy electron diffraction, scanning electron and atomic force microscopy. X-ray diffraction results show very high phase purity and a relaxation state of the GaN film close to 80%. The surface morphology, showing characteristic M-plane streaks, is flat and smooth. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：6773 / 6776
页数：4
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