Low noise silicon microstrip detector

被引：1
|
作者：
Kucewicz, W
Pilch, M
机构：
[1] Univ Min & Met, PL-30059 Krakow, Poland
[2] Inst Electron Technol, PL-02668 Warsaw, Poland
来源：
NUCLEAR PHYSICS B | 1998年
关键词：
D O I：
10.1016/S0920-5632(97)00582-3
中图分类号：
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号：
摘要：
Results obtained during characterization of position silicon detector with integrated biasing polysilicon resistors and capacitors are presented. These detectors show very small active area leakage current (about 20 +/- 13 nA/cm(2)) and have a high S/N ratio (150) for minimum ionizing particles.
引用
收藏
页码：330 / 334
页数：5
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