Interface Trap Density Estimation in FinFETs Using the gm/ID Method in the Subthreshold Regime

被引：3
|
作者：
Boksteen, Boni K. [1 ,2 ]
Schmitz, Jurriaan [1 ]
Hueting, Raymond J. E. [1 ]
机构：
[1] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands
[2] ABB Semicond, CH-5600 Lenzburg, Switzerland
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 05期
关键词：
Complementary MOSFETs (CMOSFETs); current; FinFETs; MOS devices; traps; FIELD-EFFECT TRANSISTORS; THIN-FILM; MODEL; EXTRACTION; SLOPE; NOISE;
D O I：
10.1109/TED.2016.2539382
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we show that the subthreshold current-voltage characteristic can be used for estimating the interface trap density as a function of the energy in fully depleted symmetric metal-oxide-semiconductor devices with a minimum amount of modeling. The method is analyzed using TCAD simulations, and illustrated with the measurements on n-type silicon-on-insulator FinFETs. The results indicate that the trap density can be extracted between similar to 0.65 and 0.90 eV. This range is limited by resolution issues at the lowest current levels, and by the transition from subthreshold to saturation behavior at the high current levels.
引用
收藏
页码：1814 / 1820
页数：7
相关论文
共 50 条
  • [1] Interface Trap Density Estimation in FinFETs from the Subthreshold Current
    Schmitz, J.
    Kaleli, B.
    Kuipers, P.
    van den Berg, N.
    Smits, S. M.
    Hueting, R. J. E.
    2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, : 164 - 167
  • [2] The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes
    A. E. Abdikarimov
    Technical Physics Letters, 2020, 46 : 494 - 496
  • [3] The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes
    Abdikarimov, A. E.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (05) : 494 - 496
  • [4] Direct measurement of top and sidewall interface trap density in SOI FinFETs
    Kapila, G.
    Kaczer, B.
    Nackaerts, A.
    Collaert, N.
    Groeseneken, G. V.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (03) : 232 - 234
  • [5] TECHNICAL METHOD OF DETERMINATION OF THE INTERFACE TRAP DENSITY
    JAKUBOWSKI, A
    INIEWSKI, K
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 89 (01): : 383 - 388
  • [6] Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs
    Tettamanzi, Giuseppe Carlo
    Paul, Abhijeet
    Lee, Sunhee
    Mehrotra, Saumitra R.
    Collaert, Nadine
    Biesemans, Serge
    Klimeck, Gerhard
    Rogge, Sven
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (04) : 440 - 442
  • [7] TECHNICAL METHOD OF DETERMINATION OF THE INTERFACE TRAP DENSITY.
    Jakubowski, A.
    Iniewski, K.
    Physica Status Solidi (A) Applied Research, 1985, 89 (01): : 383 - 388
  • [8] Sensitivity Analysis of a Technique for the Extraction of Interface Trap Density in SiC MOSFETs from Subthreshold Characteristics
    Hughart, D. R.
    Flicker, J. D.
    Atcitty, S.
    Marinella, M. J.
    Kaplar, R. J.
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [9] Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs
    Zhang, E. X.
    Fleetwood, D. M.
    Duan, G. X.
    Zhang, C. X.
    Francis, S. A.
    Schrimpf, R. D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) : 3062 - 3068
  • [10] SIMPLE METHOD FOR DETERMINATION OF THE INTERFACE TRAP DENSITY AT THE MIDGAP IN MOS STRUCTURES
    JAKUBOWSKI, A
    INIEWSKI, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : 545 - 549
12345