Experimental comparison between Double Gate, Ground Plane, and Single Gate SOICMOSFETs

被引：20

作者：

Lolivier, J ^{[1
]}

Widiez, J ^{[1
]}

Vinet, M ^{[1
]}

Poiroux, T ^{[1
]}

Daugé, F ^{[1
]}

Previtali, B ^{[1
]}

Mouis, M ^{[1
]}

Jommah, J ^{[1
]}

Balestra, F ^{[1
]}

Deleonibus, S ^{[1
]}

机构：

[1] CEA, DRT, LETI, F-38054 Grenoble 9, France

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSDER.2004.1356492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we report an experimental comparison between planar Double Gate, Single Gate and Ground Plane CMOSFETs. Thanks to an original process, we managed to co-integrate on the same wafer these three devices with a TiN metal gate. Short channel effect control, static performance and mobility are quantified for each architecture. Advantages of Double Gate devices over Ground plane and Single Gate transistors are experimentally highlighted. Ground Plane MOSFETs require an optimized BOX in order to achieve a 30% in the saturation current.

引用

页码：77 / 80

页数：4

共 50 条

[21] A Comprehensive Review on the Single Gate, Double Gate, Tri-Gate, and Heterojunction Tunnel FET for Future Generation Devices
P. Hannah Blessy
A. Shenbagavalli
T. S. Arun Samuel
Silicon, 2023, 15 : 2385 - 2405
[22] UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime
Arshad, M. K. Md
Makovejev, S.
Olsen, S.
Andrieu, F.
Raskin, J. -P.
Flandre, D.
Kilchytska, V.
SOLID-STATE ELECTRONICS, 2013, 90 : 56 - 64
[23] Comparisons between Dual and Tri Material Gate on a 32 nm Double Gate MOSFET
Dasgupta, Arpan
Das, Rahul
Chakraborty, Shramana
Dutta, Arka
Kundu, Atanu
Sarkar, Chandan K.
NANO, 2016, 11 (10)
[24] Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
Verhulst, Anne S.
Soree, Bart
Leonelli, Daniele
Vandenberghe, William G.
Groeseneken, Guido
JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
[25] Geometric Magnetoresistance and Mobility Behavior in Single-Gate and Double-Gate SOI Devices
Rodriguez, N.
Doneth, L.
Gamiz, F.
Cristoloveanu, S.
2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 51 - +
[26] An Experimental Investigation of the Effect of Slot Vortex on Plane Gate Vibration
Shen, Chunying
He, Shihua
Wang, Wei
Liu, Yuelou
PROCEEDINGS OF THE 2017 6TH INTERNATIONAL CONFERENCE ON ENERGY AND ENVIRONMENTAL PROTECTION (ICEEP 2017), 2017, 143 : 1439 - 1445
[27] Experimental Study on the Slip-Stick Vibration of Plane Gate
Wang, Yanzhao
Xu, Guobin
Liu, Zhicheng
Yang, Deming
WATER, 2024, 16 (06)
[28] Comprehensive analysis of single and double gate organic phototransistor
Bashir, Ishrat
Amin, S. Intekhab
Majeed, Lubna
Rasool, Zuber
Anand, Sunny
OPTICAL AND QUANTUM ELECTRONICS, 2023, 55 (12)
[29] Comprehensive analysis of single and double gate organic phototransistor
Ishrat Bashir
S. Intekhab Amin
Lubna Majeed
Zuber Rasool
Sunny Anand
Optical and Quantum Electronics, 2023, 55
[30] REALIZATION OF AN IN-PLANE-GATE SINGLE-ELECTRON TRANSISTOR
POTHIER, H
WEIS, J
HAUG, RJ
VONKLITZING, K
PLOOG, K
APPLIED PHYSICS LETTERS, 1993, 62 (24) : 3174 - 3176

← 1 2 3 4 5 →