Synthesis and characterization of Tin Selenide thin films

被引:0
|
作者
Liu, Kegao [1 ]
Ji, Nianjing [2 ]
Xu, Yong [1 ]
Wang, Jiyang [2 ]
机构
[1] Shandong Jianzhu Univ, Sch Mat Sci & Engn, Jinan 250101, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
Chemical synthesis; Semiconductors; Thin film; SnSe2; TIN(II) SELENIDE; SNSE2; DEPOSITION; SE; SN;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin Selenide thin films were synthesized by spin coating and co-reduction from raw materials of SnCl2 center dot 2H(2)O and SeO2. The phase and morphology of the film products were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM) respectively. XRD results show that, the obtained SnSe2 thin film shows preferred growth trend along Z axis with crystal planes of (001), (002), (003) and (004); The crystallinity of film samples prepared at 160 degrees C, 170 degrees C and 180 degrees C increases with temperature rising. Relative pure SnSe2 phase with good crystallinity can be obtained in the film sample prepared at 180 degrees C while impurity phase SnSe appeared in the samples obtained at 200 degrees C. SEM and AFM results show that, the sample obtained by reacting twice at 180 degrees C for 10 h shows relatively dense and continuous film with rough surface and consists of most particles with diameters of about 0.1 similar to 0.5 mu m and a few larger particles. There are some few particles and many vertical nanoflakes or micropores in the film samples obtained at 200 degrees C.
引用
收藏
页码:1081 / 1084
页数:4
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