Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

被引：32

作者：

Yerino, Christopher D. ^{[1
]}

Simmonds, Paul J. ^{[2
]}

Liang, Baolai ^{[3
,4
]}

Jung, Daehwan ^{[1
]}

Schneider, Christian ^{[5
,6
]}

Unsleber, Sebastian ^{[5
,6
]}

Vo, Minh ^{[5
,6
]}

Huffaker, Diana L.

Hoefling, Sven ^{[5
,6
,7
]}

Kamp, Martin ^{[5
,6
]}

Lee, Minjoo Larry ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Boise State Univ, Dept Phys & Mat Sci & Engn, Boise, ID 83725 USA

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[4] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[5] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

[6] Univ Wurzburg, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

[7] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 25期

基金：

美国国家科学基金会;

关键词：

ENTANGLED PHOTON PAIRS; DROPLET EPITAXY; GAAS; EMISSION; ISLANDS; INGAAS;

D O I：

10.1063/1.4904944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111) A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 mu eV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters. (C) 2014 AIP Publishing LLC.

引用

页数：5

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