Piezoelectric InAs/GaAs quantum dots with reduced fine-structure splitting for the generation of entangled photons

被引：9

作者：

Germanis, Savvas ^{[1
]}

Beveratos, Alexios ^{[2
]}

Dialynas, George E. ^{[3
]}

Deligeorgis, George ^{[4
]}

Savvidis, Pavlos G. ^{[1
,4
]}

Hatzopoulos, Zacharias ^{[3
,4
]}

Pelekanos, Nikos T. ^{[1
,4
]}

机构：

[1] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece

[2] Lab Photon & Nanostruct LPN CNRS, UPR 20, F-91460 Marcoussis, France

[3] Univ Crete, Dept Phys, Iraklion 71003, Greece

[4] IESL FORTH, Microelect Res Grp, Iraklion 71110, Greece

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 03期

关键词：

ELECTRIC-FIELD;

D O I：

10.1103/PhysRevB.86.035323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polarization-resolved single-dot spectroscopy reveals that the exciton fine-structure splitting in piezoelectric (211)B InAs/GaAs quantum dots is smaller than 10 mu eV in the vast majority of examined dots. These values are significantly reduced compared to as-grown (100)-oriented InAs dots. Time-resolved measurements confirm the high oscillator strength of these dots, in spite of the internal piezoelectric field, suggesting good quantum efficiency at 4 K, comparable with that of (100) InAs/GaAs dots. Lastly, photon correlation measurements demonstrate single-photon emission from exciton levels of these dots. All these features make this intriguing dot system promising for implementing solid-state entangled photon sources.

引用

页数：5

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