Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

被引：55
|
作者：
Seguin, R. [1 ]
Schliwa, A.
Germann, T. D.
Rodt, S.
Poetschke, K.
Strittmatter, A.
Pohl, U. W.
Bimberg, D.
Winkelnkemper, M.
Hammerschmidt, T.
Kratzer, P.
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[3] Univ Duisburg Essen, Fachbereich Phys, D-47048 Duisburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 26期
关键词：
D O I：
10.1063/1.2424446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within 8-band k center dot p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position. (c) 2006 American Institute of Physics.
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页数：3
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