Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons

被引：0
|
作者：
Ghali, Mohsen [1 ]
Ohtani, Keita [1 ]
Ohno, Yuzo [1 ]
Ohno, Hideo [1 ,2 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 06期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1143/JJAP.51.06FE14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al0.3Ga0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to approximate to 1.5 mu eV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs. (C) 2012 The Japan Society of Applied Physics
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页数：3
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