Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons

被引：0

作者：

Ghali, Mohsen ^{[1
]}

Ohtani, Keita ^{[1
]}

Ohno, Yuzo ^{[1
]}

Ohno, Hideo ^{[1
,2
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 06期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1143/JJAP.51.06FE14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al0.3Ga0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to approximate to 1.5 mu eV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 24 条

[21] Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting
Schuck, Christopher F.
Boutelle, Robert
Silverman, Kevin
Moody, Galan
Simmonds, Paul J.
JPhys Photonics, 2021, 3 (02):
[22] Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting
Schuck, Christopher F.
Boutelle, Robert
Silverman, Kevin
Moody, Galan
Simmonds, Paul J.
JOURNAL OF PHYSICS-PHOTONICS, 2021, 3 (02):
[23] Effects of random alloy disorder, shape deformation, and substrate misorientation on the exciton lifetime and fine structure splitting of GaAs/AlxGa1-xAs(111) quantum dots
Pirard, Geoffrey
Basset, Francesco Basso
Bietti, Sergio
Sanguinetti, Stefano
Trotta, Rinaldo
Bester, Gabriel
PHYSICAL REVIEW B, 2023, 107 (20)
[24] Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots -: art. no. 041907
Kowalik, K
Krebs, O
Lemaître, A
Laurent, S
Senellart, P
Voisin, P
Gaj, JA
APPLIED PHYSICS LETTERS, 2005, 86 (04) : 041907 - 1

← 1 2 3 →