A wide-band on-wafer noise parameter measurement system at 50-75 GHz

被引：25
|
作者：
Kantanen, M [1 ]
Lahdes, M [1 ]
Vähä-Heikkilä, T [1 ]
Tuovinen, J [1 ]
机构：
[1] VTT, Tech Res Ctr Finland, Mililab, Milimeter Wave Lab Finland, FIN-02044 Espoo, VTT, Finland
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 05期
关键词：
noise-parameter measurements; on-wafer characterization; wide-band measurements;
D O I：
10.1109/TMTT.2003.810129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide-band on-wafer noise parameter measured ment system at 50-75 GHz is presented. This measurement system is based on the, cold-source, method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and act devices are shown over a 50-75-GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis. to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.
引用
收藏
页码：1489 / 1495
页数：7
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