A wide-band on-wafer noise parameter measurement system at 50-75 GHz

被引：25

作者：

Kantanen, M ^{[1
]}

Lahdes, M ^{[1
]}

Vähä-Heikkilä, T ^{[1
]}

Tuovinen, J ^{[1
]}

机构：

[1] VTT, Tech Res Ctr Finland, Mililab, Milimeter Wave Lab Finland, FIN-02044 Espoo, VTT, Finland

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 05期

关键词：

noise-parameter measurements; on-wafer characterization; wide-band measurements;

D O I：

10.1109/TMTT.2003.810129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wide-band on-wafer noise parameter measured ment system at 50-75 GHz is presented. This measurement system is based on the, cold-source, method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and act devices are shown over a 50-75-GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis. to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.

引用

页码：1489 / 1495

页数：7

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