Assessment of quantum yield experiments via full band Monte Carlo simulations

In this paper we present an in-depth analysis of Quantum Yield (QY) data by means of Full Band Monte Carlo (FBMC) simulation including data from stressed oxides. The effect of device structure and initial energy distribution on QY efficiency is explored and the consequences of oxide stress on QY data are analyzed. In particular, we show that: a) there is universal shape far QY curves in fresh oxides independent of oxide thickness and substrate doping; b) QY data can be used to gain important insight into possible Stress Induced Leakage Current (SILC) mechanisms and discriminate between different SILC models.