Two-layer ultra-high density X-ray optical memory

Data reading procedure from nanostructured semiconductor X-ray optical memory (X-ROM) system detects data by measuring the changes in x-ray micro beam intensity reflected from the various surface points of data storage media. Two different mechanisms of the digital information read-out procedure, which are utilizing grazing-angle incidence X-ray backscattering diffraction (GIXB) and grazing-angle incidence X-ray reflection (GIX) techniques respectively, enable, in principle, the fabrication and exploitation of two-layer X-ROM. Angle of incidence of the x-ray micro beam is different for each storage layer of the proposed two-layer X-ROM.