Write-Back Technique for Single-Ended 7T SRAM cell

被引：0

作者：

Melikyan, Vazgen ^{[1
]}

Avetisyan, Aram ^{[1
]}

Babayan, Davit ^{[1
]}

Safaryan, Karo ^{[1
]}

Hakhverdyan, Tigran ^{[1
]}

机构：

[1] Synopsys Armenia CJSC, Arshakunyats 41, Yerevan, Armenia

来源：

2017 IEEE 37TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2017年

关键词：

Memory; Static Random Access Memory; Write Back; stability; variation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the new Write-Back scheme, which solve the half-select operation problem and faster than conventional Write-Back technique for memory array with seven-transistor (7T) single-ended static random access memory (SE-SRAM) bit cell. Data in the cells are sensitive and flipping can happen, so proposed scheme improves the stability issue for half-selected cells without performance degradation.

引用

页码：112 / 115

页数：4

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