Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

被引：1

作者：

Gladysiewicz, M. ^{[1
]}

Kudrawiec, R. ^{[1
]}

Misiewicz, J. ^{[1
]}

Cywinski, G. ^{[2
]}

Siekacz, M. ^{[2
]}

Skierbiszewski, C. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 19期

关键词：

QUANTUM-WELLS; ELECTROREFLECTANCE; SEMICONDUCTORS; SPECTROSCOPY; ABSORPTION;

D O I：

10.1088/0022-3727/43/19/195101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have applied modulation spectroscopy to study the intersubband (IS) and the interband (IB) transitions in InGaN/AlInN multi-quantum well (QW) structures with the QW width varying from 1.3 to 1.8 nm, and proposed a simple method to analyse the broadening of IS and IB transitions. With this method the measured broadenings of IS and IB transitions have been compared with theoretical calculations performed within the effective mass approximation for a QW system with various QW width fluctuations. Within the framework of this comparison it has been found that the QW width fluctuation in the investigated InGaN/AlInN QW system is close to 2 monolayers.

引用

页数：4

共 50 条

[1] Broadening of intersubband transitions in InGaN/AlInN multiquantum wells
Cywinski, G.
Gladysiewicz, M.
Kudrawiec, R.
Krysko, M.
Feduniewicz-Zmuda, A.
Siekacz, M.
Sawicka, M.
Wolny, P.
Smalc-Koziorowska, J.
Nevou, L.
Tchernycheva, M.
Julien, F. H.
Misiewicz, J.
Skierbiszewski, C.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
[2] Broadening of interband transitions in InGaN quantum wells
Gladysiewicz, M.
Kudrawiec, R.
Misiewicz, J.
Siekacz, M.
Cywinski, G.
Skierbiszewski, C.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2282 - 2284
[3] Random approach to determine the broadening of intersubband and interband transitions in (In)GaN/Al(In)N quantum wells
Gladysiewicz, Marta
Kudrawiec, Robert
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (48)
[4] Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells
Kudrawiec, R.
Gladysiewicz, M.
Misiewicz, J.
Cywinski, G.
Siekacz, M.
Skierbiszewski, C.
[J]. MICROELECTRONICS JOURNAL, 2009, 40 (4-5) : 805 - 808
[5] Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions
Kudrawiec, R.
Gladysiewicz, M.
Motyka, M.
Misiewicz, J.
Cywinski, G.
Siekacz, M.
Skierbiszewski, C.
[J]. MICROELECTRONICS JOURNAL, 2009, 40 (03) : 392 - 395
[6] Photoluminescence studies of InGaN/GaN multi-quantum wells
Davidson, JA
Dawson, P
Wang, T
Sugahara, T
Orton, JW
Sakai, S
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (06) : 497 - 505
[7] Dynamics of localized carriers in InGaN multi-quantum wells
Kyhm, K.
Taylor, R. A.
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (02) : 538 - 541
[8] Atomic scale analysis of InGaN multi-quantum wells
Benamara, M
Liliental-Weber, Z
Swider, W
Washburn, J
Dupuis, RD
Grudowski, PA
Eiting, CJ
Yang, JW
Khan, MA
[J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 357 - 362
[9] Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells
田武
鄢伟一
熊晖
戴江南
方妍妍
吴志浩
余晨辉
陈长清
[J]. Chinese Physics B, 2013, 22 (05) : 477 - 483
[10] Effects of polarization on intersubband transitions of AlxGa1-xN/GaN multi-quantum wells
Tian Wu
Yan Wei-Yi
Xiong Hui
Dai Jian-Nan
Fang Yan-Yan
Wu Zhi-Hao
Yu Chen-Hui
Chen Chang-Qin
[J]. CHINESE PHYSICS B, 2013, 22 (05)

← 1 2 3 4 5 →