Dynamics of localized carriers in InGaN multi-quantum wells

被引：0
|
作者：
Kyhm, K. [1 ]
Taylor, R. A.
机构：
[1] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[2] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
[3] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 49卷 / 02期
关键词：
localized exciton; time-resolved photoluminescence; quantum well structures;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Time-resolved photoluminescence measurements are performed in a In0.02Ga0.98N/In0.16Ga0.84N multiple-quantum well structure in order to investigate the spontaneous emission mechanism. The radiative and the non-radiative recombination times are deduced from the photoluminescence decay times using the temperature-dependent internal quantum efficiency measured from the temperature-dependent normalized photoluminescence intensity. We found that the radiative recombination time has a linear temperature-dependence for T <= 100 K, consistent with the two-dimensional nature of excitons. This suggests that at low temperatures 2D excitons are weakly localized at the potential minima in the quantum well.
引用
收藏
页码：538 / 541
页数：4
相关论文
共 50 条
  • [1] Photoluminescence studies of InGaN/GaN multi-quantum wells
    Davidson, JA
    Dawson, P
    Wang, T
    Sugahara, T
    Orton, JW
    Sakai, S
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (06) : 497 - 505
  • [2] Atomic scale analysis of InGaN multi-quantum wells
    Benamara, M
    Liliental-Weber, Z
    Swider, W
    Washburn, J
    Dupuis, RD
    Grudowski, PA
    Eiting, CJ
    Yang, JW
    Khan, MA
    [J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 357 - 362
  • [3] MOCVD growth and properties of InGaN/GaN multi-quantum wells
    Keller, S
    Abare, AC
    Minsky, MS
    Wu, XH
    Mack, MP
    Speck, JS
    Hu, E
    Coldren, LA
    Mishra, UK
    DenBaars, SP
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1157 - 1160
  • [4] Investigation of strain effect in InGaN/GaN multi-quantum wells
    Wu, Ya-Fen
    [J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2013, 51 (01) : 39 - 43
  • [5] Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells
    Armani, N
    Rossi, F
    Ferrari, C
    Lazzarini, L
    Vinattieri, A
    Colocci, M
    Reale, A
    Di Carlo, A
    Grillo, V
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) : 615 - 624
  • [6] Dynamics of localized excitons in InGaN/GaN quantum wells
    Yu, HB
    Htoon, H
    deLozanne, A
    Shih, CK
    Grudowski, PA
    Dupuis, RD
    Zeng, K
    Mair, R
    Lin, JY
    Jiang, HX
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2215 - 2217
  • [7] Atomistic analysis of transport properties of InGaN/GaN multi-quantum wells
    O'Donovan, Michael
    Luisier, Mathieu
    O'Reilly, Eoin P.
    Schulz, Stefan
    [J]. 2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019), 2019, : 17 - 18
  • [8] MBE growth and optical characterization of InGaN/AlGaN multi-quantum wells
    Singh, R
    Herzog, WD
    Doppalapudi, D
    Unlu, MS
    Goldberg, BB
    Moustakas, TD
    [J]. III-V NITRIDES, 1997, 449 : 185 - 190
  • [9] Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Cywinski, G.
    Siekacz, M.
    Skierbiszewski, C.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (19)
  • [10] Localized defect states based on defective multi-quantum wells
    Ezzarfi, Abdelouahid
    Elsamri, Fatima Zahra
    Bouchafra, Yassine
    Ben-Ali, Youssef
    Sali, Ahmed
    Bria, Driss
    [J]. MATERIALS TODAY-PROCEEDINGS, 2021, 45 : 7388 - 7393
12345