Atomistic analysis of transport properties of InGaN/GaN multi-quantum wells

被引：0
|
作者：
O'Donovan, Michael [1 ,2 ]
Luisier, Mathieu [3 ]
O'Reilly, Eoin P. [1 ,2 ]
Schulz, Stefan [1 ]
机构：
[1] Univ Coll Cork, Tyndall Natl Inst, Cork T12 R5CP, Ireland
[2] Univ Coll Cork, Dept Phys, Cork, Ireland
[3] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland
来源：
2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019) | 2019年
基金：
爱尔兰科学基金会;
关键词：
InGaN; quantum wells; transport properties; atomistic description;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green's Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.
引用
收藏
页码：17 / 18
页数：2
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