Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells

被引:0
|
作者
Kudrawiec, R. [1 ]
Gladysiewicz, M. [1 ]
Misiewicz, J. [1 ]
Cywinski, G. [2 ]
Siekacz, M. [2 ]
Skierbiszewski, C. [2 ]
机构
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
关键词
Electroreflectance; GaN; Quantum Wells; MULTIPLE-QUANTUM WELLS; INTERSUBBAND ABSORPTION; MU-M; ELECTROREFLECTANCE; GAN;
D O I
10.1016/j.mejo.2008.11.032
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Contactless electroreflectance (CER) has been applied to investigate energies and intensities of optical transitions in GaInN/AlInN multi-quantum wells (MQWs) with the various QW widths (1.55 and 1.8 run) and barrier thicknesses (3 and 6 nm). In addition to the ground state transition, optical transitions related to excited states (2H-1C and 1H-2C transitions, where kH-1C denotes a transition between the kth valence and the Ith conduction subbands) have been observed in CER spectra. It has been found that the intensities of 2H-1C and 1H-2C transitions (i.e., transitions which are forbidden for non-polar square-like QWs) are comparable with the intensity of the ground state transition. In addition, it has been observed that the relative intensities of QW transitions depend on both the QW width as well as the barrier thickness. This experimental observation has been confirmed by theoretical calculations performed in the framework of the electron effective mass approximation model taking into account polarization effects in wurtzite III-N alloys. The calculations clearly show that the intensity of QW transitions for GaInN/AlInN MQWS Strongly Varies with the QW width as well as the barrier thickness. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:805 / 808
页数:4
相关论文
共 50 条
  • [1] Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Cywinski, G.
    Siekacz, M.
    Skierbiszewski, C.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (19)
  • [2] Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions
    Kudrawiec, R.
    Gladysiewicz, M.
    Motyka, M.
    Misiewicz, J.
    Cywinski, G.
    Siekacz, M.
    Skierbiszewski, C.
    [J]. MICROELECTRONICS JOURNAL, 2009, 40 (03) : 392 - 395
  • [3] Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells
    Kudrawiec, R.
    Motyka, M.
    Cywinski, G.
    Siekacz, M.
    Skierbiszewski, C.
    Nevou, L.
    Doyennette, L.
    Tchernycheva, M.
    Julien, F. H.
    Misiewicz, J.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008, 2008, 5 (02): : 503 - +
  • [4] Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
    Cywinski, G.
    Skierbiszewski, C.
    Siekacz, M.
    Feduniewicz-Zmuda, A.
    Krysko, M.
    Gladysiewicz, M.
    Kudrawiec, R.
    Nevou, L.
    Kheirodin, N.
    Julien, F. H.
    Misiewicz, J.
    [J]. ACTA PHYSICA POLONICA A, 2008, 114 (05) : 1093 - 1099
  • [5] Cubic GaInN/GaN Multi-Quantum Wells for Increased Smart Lighting System Efficiency
    Stark, Christoph J. M.
    Detchprohm, Theeradetch
    Wetzel, Christian
    Lee, S. C.
    Brueck, S. R. J.
    [J]. 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [6] Energy difference between electron subbands in AlInN/GaInN quantum wells studied by contactless electroreflectance spectroscopy
    Motyka, M.
    Kudrawiec, R.
    Cywinski, G.
    Siekacz, M.
    Skierbiszewski, C.
    Misiewicz, J.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (25)
  • [8] Fabrication of light emitting diodes with GaInN multi-quantum wells on Si (111) substrate by MOCVD
    Adachi, M
    Nishikawa, N
    Ishikawa, H
    Egawa, T
    Jimbo, T
    Umeno, M
    [J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 868 - 871
  • [9] Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content
    Kudrawiec, R.
    Yuen, H. B.
    Bank, S. R.
    Bae, H. P.
    Wistey, M. A.
    Harris, James S.
    Motyka, M.
    Gladysiewicz, M.
    Misiewicz, J.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (02): : 364 - 372
  • [10] Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy
    Sun, HD
    Dawson, MD
    Othman, M
    Yong, JCL
    Rorison, JM
    Gilet, P
    Grenouillet, L
    Million, A
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (03) : 376 - 378