Nitride-based high power flip-chip near-UV LEDs with reflective submount

被引：19

作者：

Shen, C. F. ^{[1
]}

Chang, S. J.

Ko, T. K.

Shei, S. C.

Lai, W. C.

Chang, C. S.

Chen, W. S.

Huang, S. P.

Ku, Y. W.

Horng, R. H.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Univ Tainan, Dept Elect Engn, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[5] Epitech Technol Corp, Hsinshi 744, Taiwan

[6] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

IET OPTOELECTRONICS | 2007年 / 1卷 / 01期

关键词：

D O I：

10.1049/iet-opt:20060003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs.

引用

页码：27 / 30

页数：4

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