Nitride-based high power flip-chip near-UV LEDs with reflective submount

被引：19

作者：

Shen, C. F. ^{[1
]}

Chang, S. J.

Ko, T. K.

Shei, S. C.

Lai, W. C.

Chang, C. S.

Chen, W. S.

Huang, S. P.

Ku, Y. W.

Horng, R. H.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Univ Tainan, Dept Elect Engn, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[5] Epitech Technol Corp, Hsinshi 744, Taiwan

[6] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

IET OPTOELECTRONICS | 2007年 / 1卷 / 01期

关键词：

D O I：

10.1049/iet-opt:20060003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs.

引用

页码：27 / 30

页数：4

共 50 条

[21] Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes
Liu, Wen-Jie
Hu, Xiao-Long
Liu, Yi-Jun
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (23) : 19825 - 19829
[22] Silicon Based Wafer-level Packaging for Flip-chip LEDs
Chen, Dong
Zhang, Li
Chen, Haijie
Tan, K. H.
Lai, C. M.
2015 16TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2015,
[23] Fabrication of high-power flip-chip blue and white LEDs operating under high current density
Zakheim, DA
Smirnova, IP
Arakcheeva, EM
Kulagina, MM
Gurevich, SA
Rozhansky, IV
Lundin, VW
Tsatsulnikov, AF
Sakharov, AV
Fomin, AV
Zakheim, AL
Vasil'eva, ED
Itkinson, GV
5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, : 2401 - 2404
[24] Enhanced performance of GaN-based thin-film flip-chip LEDs with reflective current blocking layers
Liu, Taoming
Deng, Youcai
Liu, Shibiao
Zhang, Zhening
Su, Yuhan
Chen, Guolong
Kuo, Hao-Chung
Lu, Yijun
Chen, Zhong
Wu, Tingzhu
Optics Express, 2024, 32 (21) : 36918 - 36926
[25] InAlN-based LEDs emitting in the near-UV region
Pampili, Pietro
Zubialevich, Vitaly Z.
Maaskant, Pleun
Akhter, Mahbub
Corbett, Brian
Parbrook, Peter J.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58
[26] Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes
Shatalov, M
Chitnis, A
Yadav, P
Hasan, MF
Khan, J
Adivarahan, V
Maruska, HP
Sun, WH
Khan, MA
APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
[27] Quantum well-free nitride-based UV LEDs emitting at 380 nm Quantum well-free nitride-based UV LEDs emitting at 380 nm
de Mierry, Philippe
Tinjod, Frank
Chenot, Sebastien
Lancefield, David
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007, 4 (01): : 13 - +
[28] Improved light extraction of nitride-based flip-chip light-emitting diodes via sapphire shaping and texturing
Huang, Shao-Hua
Horng, Ray-Hua
Wen, Kuo-Sheng
Lin, Yi-Feng
Yen, Kuo-Wei
Wuu, Dong-Sing
IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (21-24) : 2623 - 2625
[29] Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage
Liang, Renli
Zhang, Jun
Wang, Shuai
Chen, Qian
Xu, Linlin
Dai, Jiangnan
Chen, Changqing
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 1174 - 1179
[30] High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes
Lv, Jiajiang
Zheng, Chenju
Chen, Quan
Zhou, Shengjun
Liu, Sheng
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (12): : 3150 - 3156

← 1 2 3 4 5 →