Nonvolatile resistive switching memory based on amorphous carbon

被引：134

作者：

Zhuge, F. ^{[1
]}

Dai, W. ^{[1
]}

He, C. L. ^{[1
]}

Wang, A. Y. ^{[1
]}

Liu, Y. W. ^{[1
]}

Li, M. ^{[1
]}

Wu, Y. H. ^{[2
]}

Cui, P. ^{[1
]}

Li, Run-Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, NIMTE, Ningbo 315201, Zhejiang, Peoples R China

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 16期

基金：

中国国家自然科学基金;

关键词：

RESISTANCE; DEVICES; FILMS;

D O I：

10.1063/1.3406121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. [Nano Lett. 8, 3345 (2008)]. Compared to nanostructures, hydrogenated amorphous carbon (a-C: H) has much more controllable preparation processes. Study on a-C: H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/a-C: H/Pt structures with device yield 90%, ON/OFF ratio > 100, and retention time > 10(5) s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. (C) 2010 American Institute of Physics. [doi:10.1063/1.3406121]

引用

页数：3

共 50 条

[41] Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
Chen, C.
Yang, Y. C.
Zeng, F.
Pan, F.
APPLIED PHYSICS LETTERS, 2010, 97 (08)
[42] Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications
Choi, DH
Lee, D
Sim, H
Chang, M
Hwang, HS
APPLIED PHYSICS LETTERS, 2006, 88 (08)
[43] Nonvolatile multilevel memory effect by resistive switching in manganite thin films
Lau, H. K.
Leung, C. W.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
[44] Hyperbranched polyimide with triazole core structure for nonvolatile resistive switching memory
Tian, Ye
Zhu, Shiyang
Liu, Huiling
Song, Ying
Liu, Bing
Yao, Hongyan
Guan, Shaowei
JOURNAL OF POLYMER SCIENCE, 2024, 62 (10) : 2051 - 2057
[45] Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
Sleiman, A.
Sayers, P.W.
Mabrook, M.F.
Journal of Applied Physics, 2013, 113 (16):
[46] Investigation of Resistive Switching of Insulating Hafnium Nitride for Nonvolatile Memory Applications
Do, Hoang Bao Chau
Chung, Chin-Han
Mai, Thi Thu
Prasad, Om Kumar
Jagga, Deepali
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2024, 13 (02)
[47] Carbon Nitride Supported Ultrafine Manganese Sulfide Based Nonvolatile Resistive Switching Device for Nibble-Sized Memory Application
Perla, Venkata K.
Ghosh, Sarit K.
Mallick, Kaushik
ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (12) : 3987 - 3993
[48] Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances
Hu, Wei
Qin, Ni
Wu, Guangheng
Lin, Yanting
Li, Shuwei
Bao, Dinghua
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (36) : 14658 - 14661
[49] Conductance Quantization in Nonvolatile Resistive Switching Memory Based on the Polymer Composite of Zinc Oxide Nanoparticles
Sun, Yanmei
Wen, Dianzhong
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (19): : 10582 - 10591
[50] Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide
Wang, Yongshun
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (02): : 364 - 368

← 1 2 3 4 5 →