Low-k/Cu interconnect integration with low-damage ash using atomic hydrogen

被引：0
|
作者：
Tomioka, Kazuhiro [1 ]
Kondo, Seiichi [1 ]
Ohhashi, Naofumi [1 ]
Suzuki, Takamasa [1 ]
Soda, Eiichi [1 ]
Kobayashi, Nobuyoshi [1 ]
机构：
[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan
来源：
Advanced Metallization Conference 2006 (AMC 2006) | 2007年
关键词：
low-k; ash; hydrogen; catalyzer;
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
An ash process using atomic hydrogen which is generated by heated tungsten catalyzer (CAT-ASH) was characterized in terms of process-induced damage. Dielectric constant (k) was reduced after the CAT-ASH process with etched blanket low-k film. No sidewall damage layer was observed in the case of performing diluted HF dip experiment. Moreover, High (>90%) 200nm pitch via-chain yield was obtained compared to a conventional ash process.
引用
收藏
页码：61 / 66
页数：6
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