Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity

被引：2

作者：

Zhang, Yong-Ci ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chen, Wen-Chung ^{[1
]}

Tan, Yung-Fang ^{[1
]}

Sun, Li-Chuan ^{[1
]}

Kuo, Chuan-Wei ^{[1
]}

Lin, Chih-Chih ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect, Kaohsiung 80424, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 06期

关键词：

Resistance; Switches; Thermal resistance; Ions; Thermal conductivity; Electrodes; Conductivity; C-doped BN (C; BN); resistive random access memory (RRAM); sidewall; thermal field effect; BORON; FILMS;

D O I：

10.1109/TED.2022.3169116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of different pulse rise time in resistive random access memory (RRAM) is presented in this study. The result shows that the length of pulse rise time will lead to variations in RRAM off-state resistance that occur due to which of two distinct effects governs the reaction, either the electric field or the thermal field. Different sidewall materials are adopted in RRAM devices to verify these phenomena, and a physical model supplemented with COMSOL simulation is proposed.

引用

页码：3147 / 3150

页数：4

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