Resistive Switching Characteristics of Pt/Dy2O3/Pt Resistive Random Access Memory Devices with Different Rapid Thermal Annealing Process

被引：0
|
作者：
Yu J. [1 ,2 ,3 ]
Zhao H. [1 ,2 ]
Chen X. [1 ,2 ,3 ]
Wei F. [1 ]
机构：
[1] State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Beijing
[2] GRIMAT Engineering Institute Co. Ltd., Beijing
[3] General Research Institute for Nonferrous Metals, Beijing
来源：
Xiyou Jinshu/Chinese Journal of Rare Metals | 2020年 / 44卷 / 12期
关键词：
Dysprosium oxide; Oxygen vacancies; Rapid thermal annealing; Resistive random access memory (RRAM);
D O I：
10.13373/j.cnki.cjrm.XY16040030
中图分类号：
学科分类号：
摘要：
Pt/Dy2O3/Pt resistive random access memory (RRAM) devices were fabricated on the Si/SiO2 substrate through RF magnetron sputtering method. The effects of the rapid thermal annealing (RTA) process on the switching characteristics of the RRAM devices were investigated. Surface topography, crystal structure and the chemical states of Dy and O were clarified by atom force microscopy (AFM), transmission electron microscopy (TEM) and X-ray photoelectrons spectroscopy (XPS) measurements respectively. The results showed that the RTA process could increase the ratio of the low and high resistance states (Roff/Ron), lower the operate voltage, and improve the resistive switching uniformity. According to the XPS results, the oxygen content in the surface of Dy2O3 film was increased after RTA process. Energy dispersive spectrometer (EDS) result showed the enrichment of the oxygen on the surface which led to the increase of the initial resistance, and the migration of the oxygen ions from the Dy2O3 interior into the surface created oxygen vacancies behind which caused the decrease of the operate voltage. © Editorial Office of Chinese Journal of Rare Metals. All right reserved.
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页码：1286 / 1291
页数：5
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