Intraexciton and Intracenter Terahertz Radiation from Doped Silicon under Interband Photoexcitation

被引：1

作者：

Andrianov, A. V. ^{[1
]}

Zakhar'in, A. O. ^{[1
]}

Petrov, A. G. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

来源：

JETP LETTERS | 2018年 / 107卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

EMISSION; ELECTROLUMINESCENCE; EXCITATION; SPECTRA; DONORS;

D O I：

10.1134/S0021364018090059

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Terahertz photoluminescence of boron- and phosphorus-doped silicon at low temperatures under interband photoexcitation is investigated. The lines of radiative transitions between free-exciton levels and between the levels of shallow impurity centers are observed. The intensities of these lines exhibit different dependences on temperature and excitation intensity. At temperatures near the temperature of liquid helium (T similar to 5 K), the terahertz radiation spectrum features a broad band (about 18-20 meV wide) with a peak at an energy of about 20-22 meV. This band is apparently associated with radiative transitions of nonequilibrium charge carriers from the states of the continuum to the state of an electron-hole liquid.

引用

页码：540 / 543

页数：4

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