Intraexciton and Intracenter Terahertz Radiation from Doped Silicon under Interband Photoexcitation

被引：1

作者：

Andrianov, A. V. ^{[1
]}

Zakhar'in, A. O. ^{[1
]}

Petrov, A. G. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

来源：

JETP LETTERS | 2018年 / 107卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

EMISSION; ELECTROLUMINESCENCE; EXCITATION; SPECTRA; DONORS;

D O I：

10.1134/S0021364018090059

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Terahertz photoluminescence of boron- and phosphorus-doped silicon at low temperatures under interband photoexcitation is investigated. The lines of radiative transitions between free-exciton levels and between the levels of shallow impurity centers are observed. The intensities of these lines exhibit different dependences on temperature and excitation intensity. At temperatures near the temperature of liquid helium (T similar to 5 K), the terahertz radiation spectrum features a broad band (about 18-20 meV wide) with a peak at an energy of about 20-22 meV. This band is apparently associated with radiative transitions of nonequilibrium charge carriers from the states of the continuum to the state of an electron-hole liquid.

引用

页码：540 / 543

页数：4

共 50 条

[21] Terahertz Lasing from Silicon Doped with Boron
Huebers, H. -W.
Pavlov, S. G.
Eichholz, R.
Dessmann, N.
Abrosimov, N. V.
Riemann, H.
Redlich, B.
van der Meer, A. F. G.
Zhukavin, R. Kh.
Shastin, V. N.
[J]. 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2012,
[22] Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation
[J]. Hanabe, M. (hanabe@sugi98.ces.kyutech.ac.jp), 1600, Japan Society of Applied Physics (44):
[23] Low Temperature Terahertz Photoluminescence from Silicon Crystals at Interband Optical Excitation
Andrianov, A., V
Zakhra'in, A. O.
Aleksandrov, O., V
[J]. 2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
[24] Modulation effects of photocarriers on the terahertz plasma-wave resonance in high-electron-mobility transistors under interband photoexcitation
Hanabe, M
Otsuji, TH
Ishibashi, T
Uno, T
Ryzhii, V
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3842 - 3847
[25] Photoconductivity of Be-doped GaAs under intense terahertz radiation
Lewis, RA
Bradley, IV
Henini, M
[J]. SOLID STATE COMMUNICATIONS, 2002, 122 (3-4) : 223 - 228
[26] Generation of THz emission from donor centers in silicon under intracenter optical pumping
Pavlov, SG
Hovenier, JN
Klaassen, TO
Carder, D
Hübers, HW
Zhukavin, RK
Riemann, H
Redlich, B
Shastin, VN
[J]. CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2004, : 301 - 302
[27] Terahertz Raman Laser from Silicon Doped by Arsenic
Huebers, H. -W.
Pavlov, S. G.
Boettger, U.
Hovenier, J. N.
Abrosimov, N. V.
Riemann, H.
Zhukavin, R. Kh
Shastin, V. N.
Redlich, B.
van der Meer, A. F. G.
[J]. 2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 2009, : 152 - 154
[28] Terahertz emission from silicon doped by shallow impurities
Hübers, HW
Pavlov, SG
Rümmeli, MH
Zhukavin, RK
Orlova, EE
Riemann, H
Shastin, VN
[J]. PHYSICA B-CONDENSED MATTER, 2001, 308 : 232 - 235
[29] Terahertz transient stimulated emission from doped silicon
Pavlov, S. G.
Dessmann, N.
Pohl, A.
Zhukavin, R. Kh.
Klaassen, T. O.
Abrosimov, N. V.
Riemann, H.
Redlich, B.
van der Meer, A. F. G.
Ortega, J. -M.
Prazeres, R.
Orlova, E. E.
Muraviev, A. V.
Shastin, V. N.
Huebers, H. -W.
[J]. APL PHOTONICS, 2020, 5 (10)
[30] LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION
BSIESY, A
VIAL, JC
GASPARD, F
HERINO, R
LIGEON, M
MIHALCESCU, I
MULLER, F
ROMESTAIN, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (11) : 3071 - 3076

← 1 2 3 4 5 →