Terahertz impurity luminescence under the interband photoexcitation of semiconductors

被引：32

作者：

Andrianov, A. V. ^{[1
]}

Zakhar'in, A. O. ^{[1
]}

Ivanov, Yu. L. ^{[1
]}

Kipa, M. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JETP LETTERS | 2010年 / 91卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

RECOMBINATION RADIATION; STATES; KINETICS; DONORS; GAAS;

D O I：

10.1134/S0021364010020098

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The observation of intense terahertz luminescence under the interband photoexcitation of n-GaAs and p-Ge semiconductors at low temperatures is reported. The terahertz photoluminescence is caused by radiative transitions, which accompany the capture of nonequilibrium carriers by impurity centers. These centers are in turn created in the crystal due to the impurity-assisted electron-hole recombination. The external quantum yield of the luminescence reaches 0.1%.

引用

页码：96 / 99

页数：4

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