Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

被引：9

作者：

Jung, Younghun ^{[1
]}

Mastro, Michael ^{[2
]}

Hite, Jennifer ^{[2
]}

Eddy, Charles R., Jr. ^{[2
]}

Kim, Jihyun ^{[1
]}

机构：

[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

[2] USN, Res Lab, Power Elect Mat Sect, Washington, DC 20375 USA

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 06期

关键词：

Gallium nitride; Non-polar structure; Schottky contact; Scanning electron microscopy; X-ray diffraction; Metal-organic chemical vapor deposition; GAN; ENHANCEMENT; TRANSISTORS; MECHANISM; LEAKAGE; GATE;

D O I：

10.1016/j.tsf.2009.11.069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1747 / 1750

页数：4

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