Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

被引：9
|
作者：
Jung, Younghun [1 ]
Mastro, Michael [2 ]
Hite, Jennifer [2 ]
Eddy, Charles R., Jr. [2 ]
Kim, Jihyun [1 ]
机构：
[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea
[2] USN, Res Lab, Power Elect Mat Sect, Washington, DC 20375 USA
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 06期
关键词：
Gallium nitride; Non-polar structure; Schottky contact; Scanning electron microscopy; X-ray diffraction; Metal-organic chemical vapor deposition; GAN; ENHANCEMENT; TRANSISTORS; MECHANISM; LEAKAGE; GATE;
D O I：
10.1016/j.tsf.2009.11.069
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1747 / 1750
页数：4
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