Lithography and line-edge roughness of high activation energy resists

被引：24

作者：

Masuda, S ^{[1
]}

Ma, X ^{[1
]}

Noya, G ^{[1
]}

Pawlowski, G ^{[1
]}

机构：

[1] Clariant Japan KK, BU Elect Mat, Daitocho, Shizuoka 4371496, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

lithography; line-edge roughness; high activation energy resist; terpolymer; photoacid generator; quencher; process;

D O I：

10.1117/12.388309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lithographic performance and line-edge roughness (LER) of several experimental high activation energy resists containing hydroxystyrene-co-styrene-co-t-butylmethacrylate terpolymers have been determined as a function of illumination conditions, polymer, photoacid generator and quencher composition, as well as process variations. Important lithographic properties, such as iso/dense bias, exposure latitude, may deteriorate upon minimization of LER. LER is largely affected by the changes of the optical settings, while material and process influences are less pronounced.

引用

页码：252 / 263

页数：2

共 50 条

[21] Line-edge roughness: Characterization and material origin
Yamaguchi, T
Yamazaki, K
Nagase, M
Namatsu, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6B): : 3755 - 3762
[22] Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance
Yamaguchi, A
Fukuda, H
Arai, T
Yamamoto, J
Hirayama, T
Shiono, D
Hada, H
Onodera, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : 2711 - 2715
[23] Image contrast slope and line edge roughness of chemically amplified resists for postoptical lithography
Kozawa, Takahiro
Tagawa, Seiichi
Santillan, Julius Joseph
Toriumi, Minoru
Itani, Toshiro
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 2295 - 2300
[24] Depth profile and line-edge roughness of low-molecular-weight amorphous electron beam resists
Hirayama, T
Shiono, D
Matsumaru, S
Ogata, T
Hada, H
Onodera, J
Arai, T
Sakamizu, T
Yamaguchi, A
Shiraishi, H
Fukuda, H
Ueda, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7B): : 5484 - 5488
[25] Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography
Naulleau, Patrick P.
[J]. APPLIED OPTICS, 2009, 48 (18) : 3302 - 3307
[26] Diffusion-induced line-edge roughness
Stewart, MD
Schmid, GM
Goldfarb, DL
Angelopoulos, M
Willson, CG
[J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 415 - 422
[27] Molecular weight effect on line-edge roughness
Yamaguchi, T
Yamazaki, K
Namatsu, H
[J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 1212 - 1219
[28] Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography
Reynolds, GW
Taylor, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2723 - 2729
[29] Line-Edge Roughness Stochastics for 5-nm Pattern Formation in the Extreme Ultraviolet Lithography
Kim, Sang-Kon
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (08) : 4657 - 4660
[30] Line edge roughness of chemically amplified resists
Azuma, T
Chiba, K
Imabeppu, M
Kawamura, D
Onishi, Y
[J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 264 - 269

← 1 2 3 4 5 →