High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes

被引：6
|
作者：
Yu, Chia-Lin [1 ]
Chang, Ping-Chuan
Chang, Shoou-Jinn
Wu, San-Lein
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 401, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 401, Taiwan
[3] Nan Jeon Inst Technol, Dept Elect Engn, Yen Hsui Township 737, Tainan Cty, Taiwan
[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 06期
关键词：
LOW DARK CURRENT; P-I-N; ULTRAVIOLET PHOTODETECTORS; SCHOTTKY CONTACTS; PHOTODIODES; NOISE;
D O I：
10.1149/1.2718393
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
GaN-based metal-semiconductor-metal (MSM) UV photodetectors (PDs) with a low-temperature (LT) GaN cap layer and Ir/Pt contact electrodes were fabricated. Compared with the conventional Ni/Au contacts, we found that Ir/Pt contacts can reduce the dark current. Further, a smaller dark current and larger UV-to-visible rejection ratio obtained from the PD with LT GaN cap layer and Ir/Pt contact electrodes were determined. Furthermore, the noise equivalent power and detectivity (D*) were respectively obtained as 2.75 x 10(-13) W and 1.76 x 10(12) cm Hz(0.5) W-1 for the aforementioned PDs. (c) 2007 The Electrochemical Society.
引用
收藏
页码：H171 / H174
页数：4
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