High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes

被引：6

作者：

Yu, Chia-Lin ^{[1
]}

Chang, Ping-Chuan

Chang, Shoou-Jinn

Wu, San-Lein

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 401, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 401, Taiwan

[3] Nan Jeon Inst Technol, Dept Elect Engn, Yen Hsui Township 737, Tainan Cty, Taiwan

[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 06期

关键词：

LOW DARK CURRENT; P-I-N; ULTRAVIOLET PHOTODETECTORS; SCHOTTKY CONTACTS; PHOTODIODES; NOISE;

D O I：

10.1149/1.2718393

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GaN-based metal-semiconductor-metal (MSM) UV photodetectors (PDs) with a low-temperature (LT) GaN cap layer and Ir/Pt contact electrodes were fabricated. Compared with the conventional Ni/Au contacts, we found that Ir/Pt contacts can reduce the dark current. Further, a smaller dark current and larger UV-to-visible rejection ratio obtained from the PD with LT GaN cap layer and Ir/Pt contact electrodes were determined. Furthermore, the noise equivalent power and detectivity (D*) were respectively obtained as 2.75 x 10(-13) W and 1.76 x 10(12) cm Hz(0.5) W-1 for the aforementioned PDs. (c) 2007 The Electrochemical Society.

引用

页码：H171 / H174

页数：4

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