1.3μm spot-size converter integrated ASM-BH LDs with low operating current and high coupling efficiency

被引：8

作者：

Furushima, Y

Sakata, Y

Sasaki, Y

Yamazaki, H

Kudo, K

Inomoto, Y

Sasaki, T

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, ULSI Device Dev Labs, Ohtsu, Shiga 5200833, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 08期

关键词：

D O I：

10.1049/el:19980681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance 1.3 mu m spot-size-converter integrated laser diodes with a pnpn current blocking structure were fabricated using the all-selective MOVPE technique. The active layer and thickness-tapered waveguide were simultaneously and directly grown by narrow-stripe selective MOVPE. Superior lasing characteristics, such as a low threshold current of 18.1mA at 85 degrees C and a low operating current of 59.5mA for 10mW output power at 85 degrees C, and high lens-free coupling efficiency of -2.8dB to a singlemode fibre, were achieved.

引用

页码：767 / 768

页数：2

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