High-coupling efficiency of a 1.3-mu m spot-size converter integrated laser diode with pn-buried heterostructure for high-temperature operation

被引:3
|
作者
Suzaki, Y
Mitomi, O
Kondo, Y
Sakai, Y
Kawaguchi, Y
Tohmori, Y
Kadota, Y
Yamamoto, M
机构
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01
[2] Tokyo Institute of Technology, Tokyo
[3] NTT Opto-electronics Laboratories, Kanagawa
[4] Inst. Electronics, Info. Commun. E., Japan Society of Applied Physics
关键词
butt-joint selective growth; coupling efficiency; pn-buried heterostructure; semiconductor laser; spot-size converter;
D O I
10.1109/50.618396
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a novel design concept for low-loss coupling with high laser performance in a spot-size converter integrated laser diode (SS-LD) with a pn-buried heterostructure (pn-BH) and demonstrate both the good coupling efficiency and high laser performance. We clarify that a high position and a high doping concentration of an n-InP current blocking layer in the pn-BH are favorable for high-coupling efficiency with a single-mode fiber by a two-dimensional (2-D) finite-element method-based calculation. By using the proposed concept, low-loss coupling of 1.6 dB with a low threshold current of 5.5 mA at room temperature and 19.6 mA even at 85 degrees C was achieved experimentally.
引用
收藏
页码:1602 / 1607
页数:6
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