High-efficiency 1.3 μm Fabry-Perot laser diode based on hydrogenated passive spot-size converter

被引：0

作者：

机构：

[1] Tregoat, D.

[2] Barthe, F.

[3] Berthier, P.

[4] Bordes, M.

[5] Colson, V.

[6] Gentner, J.L.

[7] Hubert, S.

[8] Leclerc, D.

[9] Le Gouezigou, L.

[10] Lestra, A.

[11] Rao, E.V.K.

[12] Tscherptner, N.

[13] Fernier, B.

来源：

Tregoat, D. | 2000年

关键词：

Continuous wave lasers - High temperature properties - Hydrogenation - Integrated optoelectronics - Light absorption - Passivation - Silicon wafers;

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摘要：

We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85 °C on hydrogenated and as-grown 500 μm-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test.

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Trégoat, D
Barthe, F
Berthier, P
Bordes, M
Colson, V
Gentner, JL
Hubert, S
Leclerc, D
Le Gouezigou, L
Lestra, A
Rao, EVK
Tscherptner, N
Fernier, B
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