Fast and energy-efficient low-voltage level shifters

被引：5

作者：

Zhou, Jun ^{[1
]}

Wang, Chao ^{[1
]}

Liu, Xin ^{[1
]}

Je, Minkyu ^{[2
]}

机构：

[1] ASTAR, Inst Microelect, Singapore, Singapore

[2] Daegu Gyeongbuk Inst Sci & Technol, Taegu, South Korea

来源：

MICROELECTRONICS JOURNAL | 2015年 / 46卷 / 01期

关键词：

Level shifter; Low voltage; Low power; Near-threshold; Dynamic voltage scaling (DVS);

D O I：

10.1016/j.mejo.2014.10.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two novel low-voltage level shifter designs: one based on cross-coupled PMOS transistors and the other using current mirror structure. These two level shifters are designed to address the problems of the existing state-of-the-art level shifters. Simulation at 65 nm shows that both of the proposed level shifters achieve significantly better performance (up to 12 x) and energy consumption (up to 8 x) than the state-of-the-art level shifters with similar or less area consumption while operating from near-threshold to super-threshold region, making them optimal for level shifting in low-power systems with multiple scalable voltage domains. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：75 / 80

页数：6

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