Fast and energy-efficient low-voltage level shifters

被引:5
|
作者
Zhou, Jun [1 ]
Wang, Chao [1 ]
Liu, Xin [1 ]
Je, Minkyu [2 ]
机构
[1] ASTAR, Inst Microelect, Singapore, Singapore
[2] Daegu Gyeongbuk Inst Sci & Technol, Taegu, South Korea
关键词
Level shifter; Low voltage; Low power; Near-threshold; Dynamic voltage scaling (DVS);
D O I
10.1016/j.mejo.2014.10.009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents two novel low-voltage level shifter designs: one based on cross-coupled PMOS transistors and the other using current mirror structure. These two level shifters are designed to address the problems of the existing state-of-the-art level shifters. Simulation at 65 nm shows that both of the proposed level shifters achieve significantly better performance (up to 12 x) and energy consumption (up to 8 x) than the state-of-the-art level shifters with similar or less area consumption while operating from near-threshold to super-threshold region, making them optimal for level shifting in low-power systems with multiple scalable voltage domains. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:75 / 80
页数:6
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