Rotating disk reactor-low pressure metal organic chemical vapor deposition (MOCVD) of optical films

被引:0
|
作者
McAleese, J [1 ]
Provost, LG [1 ]
Tompa, GS [1 ]
Colibaba-Evulet, A [1 ]
Gulmac, NG [1 ]
Doyle, JJ [1 ]
机构
[1] Structured Mat Ind, Piscataway, NJ 08854 USA
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5 " to 12 " diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm x 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.
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页码:171 / 176
页数:6
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