Rotating disk reactor-low pressure metal organic chemical vapor deposition (MOCVD) of optical films

被引：0

作者：

McAleese, J ^{[1
]}

Provost, LG ^{[1
]}

Tompa, GS ^{[1
]}

Colibaba-Evulet, A ^{[1
]}

Gulmac, NG ^{[1
]}

Doyle, JJ ^{[1
]}

机构：

[1] Structured Mat Ind, Piscataway, NJ 08854 USA

来源：

THIN FILMS FOR OPTICAL WAVEGUIDE DEVICES AND MATERIALS FOR OPTICAL LIMITING | 2000年 / 597卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Over the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5 " to 12 " diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm x 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.

引用

页码：171 / 176

页数：6

共 50 条

[31] EPITAXIAL-GROWTH OF GAN FILMS BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
NAGATOMO, T
HATOOKA, Y
KOHAMA, K
MIKAMI, K
OMOTO, O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C485 - C485
[32] Synthesis of pyrite (FeS2) thin films by low pressure metal-organic chemical vapor deposition
Meester, B
Reijnen, L
Goossens, A
Schoonman, J
JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 613 - 620
[33] Heat transfer and flow stability in a rotating disk/stagnation flow chemical vapor deposition reactor
Novellus Systems, Inc, San Jose, United States
Numer Heat Transfer Part A Appl, 8 (867-879):
[34] Heat transfer and flow stability in a rotating disk stagnation flow chemical vapor deposition reactor
Joh, S
Evans, GH
NUMERICAL HEAT TRANSFER PART A-APPLICATIONS, 1997, 31 (08) : 867 - 879
[35] NUMERICAL MODELING OF PARTICLE DYNAMICS IN A ROTATING-DISK CHEMICAL-VAPOR-DEPOSITION REACTOR
DAVIS, RW
MOORE, EF
ZACHARIAH, MR
JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) : 513 - 522
[36] ELECTROCHEMICAL CHARACTERISTICS OF AMORPHOUS TITANIUM CARBIDE FILMS PRODUCED BY LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
ALLOCA, CM
WILLIAMS, WS
KALOYEROS, AE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3170 - 3175
[37] TLBACACUO SUPERCONDUCTING THIN-FILMS VIA METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD) AND THALLIUM VAPOR DIFFUSION
MALANDRINO, G
CONDORELLI, GG
FRAGALA, IL
GRANOZIO, FM
DIUCCIO, US
VALENTINO, M
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1994, 16 (12): : 1953 - 1959
[38] Integration of magneto-optical garnet films by metal-organic chemical vapor deposition
Stadler, B
Vaccaro, K
Yip, P
Lorenzo, J
Li, YQ
Cherif, M
IEEE TRANSACTIONS ON MAGNETICS, 2002, 38 (03) : 1564 - 1567
[39] Low temperature deposition of metal films by metal chloride reduction chemical vapor deposition
Ogura, Y
Kobayashi, C
Ooba, Y
Yahata, N
Sakamoto, H
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10): : 3347 - 3350
[40] Low-pressure chemical vapor deposition of silicon-based thin films in a halogenlamp reactor
Semmache, B
Kallel, S
El Omari, H
Lemiti, M
Laugier, A
CANADIAN JOURNAL OF PHYSICS, 1999, 77 (09) : 737 - 743

← 1 2 3 4 5 →