The effect of Er doping on the crystallization of Ge1-xSnx thin films

被引：0
|
作者：
Xia, Baijie [1 ,2 ]
Dong, Zhaoshi [1 ]
Zhao, Chunwang [1 ]
机构：
[1] Shanghai Maritime Univ, Coll Arts & Sci, Shanghai 201306, Peoples R China
[2] Shanghai Maritime Univ, Merchant Marine Coll, Shanghai 201306, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2021年 / 35卷 / 20期
基金：
中国国家自然科学基金;
关键词：
Ge1-x Sn-x; Er; thermal evaporation; surface roughness; GRAIN-SIZE; GROWTH; PHASE; SILICON; OXYGEN; SN; TEMPERATURE; LAYERS; LA;
D O I：
10.1142/S0217984921503371
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Er-doped Ge1-xSnx thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of Ge1-xSnx films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed Ge1-xSnx thin films.
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页数：9
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